Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3
نویسندگان
چکیده
منابع مشابه
Statistics of Exciton Emission in a Semiconductor Microcavity: Detuning and Exciton-Exciton Effects
We consider the interaction of quantum light with an ideal semiconductor microcavity. We investigate photon statistics in different conditions and the presence of detuning and exciton-exciton interaction. We show that in the resonant interaction and absence of the exciton-exciton interaction, the state of the whole system can be considered as coherent state. According to our results, it turns...
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A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS3 ) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS3 monolayer is a direct-gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS3 is highly...
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ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2015
ISSN: 2199-160X
DOI: 10.1002/aelm.201500126